%0 Conference Article
%T ONE-DIMENSIONAL DISTRIBUTION OF IMPURITY IN SILICON AND GERMANY WITH ION IMPLANTATION ACCORDING TO THE LINKHARD-SCHARF-SCHIOTTE MODEL
%A Plotnikova, E.Y.
%A Vinokurov, A.A.
%A Arsent'ev, A.V.
%K ion implantation, modeling, p-n junction, impurity concentration distribution
%J MODELING INFORMATION SYSTEMS AND TECHNOLOGIES
%D 2024
%P 6
%I FSBE Institution of Higher Education Voronezh State University of Forestry and Technologies named after G.F. Morozov