00783naa#a2200157#i#4500001001500000005001700015100004100032102000700073200014100080210013700221215001000358608003700368675018100405700002100586856001800607EN\\bibl\1683120250831203040.7##a20250825b2025####ek#y0engy0150####ca##aRU1#aMATHEMATICAL MODEL FOR CALCULATING THE FAILURE CROSS-SECTION OF MICROCIRCUITS UNDER PROTON RADIATION EXPOSUREeConference article/thesis1#aVoronezhcFSBE Institution of Higher Education Voronezh State University of Forestry and Technologies named after G.F. Morozovd2025##a9 с.##aConference article/thesis2local##aЭлектронные элементы, использующие свойства твердого тела. Полупроводниковая электроника. 621.382#1aKotlyarovgV. V.4#abibl.vgltu.ru