Russian Federation
Power integrated circuits are the energy ‘heart’ and power source of the circuit system, and have important application value in aerospace, nuclear physics experiments, nuclear medicine and other radiation environments. Therefore, anti-irradiation reinforcement of power integrated circuits is very necessary. Based on the radiation mechanism and focusing on power integrated circuits, this paper proposes universal radiation reinforcement schemes such as standard device ring-gridding technology, key leakage current compensation technology, negative pressure reinforcement technology, etc., and carries out the design of the relevant chip and irradiation experiments for verification. The equivalent aspect ratio model of runway-shaped ring-grid devices is derived and TCAD verified in this paper. The key circuit full MOSisation technique is analysed and elucidated to characterise the dynamic threshold voltage MOS devices with lower read voltage, and the DTMOS reference and pre-buck circuit are designed based on this. The total dose effect detection circuit is presented for the first time in the paper. Based on this circuit, the critical leakage current compensation technique is proposed and applied to the design of radiation-resistant oscillator.
power integrated circuit, radiation immunity, ring gate, leakage current compensation, negative voltage
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