Russian Federation
In this paper, the variable temperature characteristics of AlGaN/GaN HEMT devices are discussed. The structure design of AlGaN/GaN HEMT device and its basic characteristics at 300K were studied by Silvaco simulation software. Through simulation, it is found that temperature has a certain influence on the transfer characteristics, output characteristics and energy band characteristics, which has an impact on the performance of the device.
modeling, GaN materials, GaN HEMT devices, temperature characteristics, Silvaco simulation
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