Filial Rostovskogo gosudarstvennogo universiteta putey soobscheniya v g. Voronezhe
Russian Federation
The resistance of the IC to all kinds of radiation is established by various types of integrated circuits with a characteristic structure, the criteria of which are allowed to record single or multiple transformations. The article considers that a significant influence on the suitability of microcircuits in the situation of exposure to ionizing radiation is manifested not by spatial phenomena in silicon, but by surface effects related to the silicon-dielectric distribution line.
functional parameters, schematic modeling, cosmic radiation, radiation effects, resistance, diffusion length, ionizing radiation, displacement effects, static coefficient
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