Russian Federation
Russian Federation
The influence of proton irradiation on semiconductor random-access memory (RAM) chips in the space environment is examined. The relevance of the topic stems from the fact that cosmic-ray protons are capable of causing both instantaneous malfunctions in dynamic and static memory (DRAM, SRAM, DDR) and cumulative structural degradation that threatens the reliability of onboard equipment. The analysis focuses on the physical mechanisms by which protons affect memory elements and the resulting radiation effects, including single-event upsets (bit flips), parasitic latch-up effects, dielectric degradation, and defect accumulation. Typical failure modes of memory under ionizing radiation and their mechanisms are described.
proton irradiation; random-access memory; radiation hardness; failures; degradation; single-event upset, SEU
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