ON METHODS OF FORMING CONTACTS ON SiO2/Si SYSTEMS WITH ION TRACKS FILLED WITH Ni AND Cu NANOCLUSTERS

Belozertsev Yu.; Omorokov D.; Evsikova Natalya

doi:doi:10.58168/PHBSc-IT2025_47-52

Home / Conferences / PHYSICAL BASIS OF SCIENCE-INTENSIVE TECHNOLOGIES IN THE MODERN WORLD / PHYSICAL BASIS OF SCIENCE-INTENSIVE TECHNOLOGIES IN THE MODERN WORLD : Proceedings of the All-Russian Scientific and Methodological Conference with International Participation, dedicated to the 80th anniversary of the birth of Professor V.V. Postnikov, timed to the 95th anniversary of VSUFT named after G.F. Morozov

ON METHODS OF FORMING CONTACTS ON SiO2/Si SYSTEMS WITH ION TRACKS FILLED WITH Ni AND Cu NANOCLUSTERS

Submit manuscript

To cite

ON METHODS OF FORMING CONTACTS ON SIO2/SI SYSTEMS WITH ION TRACKS FILLED WITH NI AND CU NANOCLUSTERS

Section: SECTION 1. PHYSICAL PRINCIPLES OF MODERN HIGH-TECH TECHNOLOGIES

Proceedings: PHYSICAL BASIS OF SCIENCE-INTENSIVE TECHNOLOGIES IN THE MODERN WORLD : PROCEEDINGS OF THE ALL-RUSSIAN SCIENTIFIC AND METHODOLOGICAL CONFERENCE WITH INTERNATIONAL PARTICIPATION, DEDICATED TO THE 80TH ANNIVERSARY OF THE BIRTH OF PROFESSOR V.V. POSTNIKOV, TIMED TO THE 95TH ANNIVERSARY OF VSUFT NAMED AFTER G.F. MOROZOV

UDC 539.216.2

Belozertsev Yu. ¹

Omorokov D. ²

Evsikova Natalya ³

Author and publication information

Authors:

1. VNII Vega JSC
Russian Federation

2. Voronezhskiy gosudarstvennyy lesotehnicheskiy universitet im. G. F. Morozova
Russian Federation

3. Federal State Budget Educational Institution of Higher Education «Voronezh State University of Forestry and Technologies named after G.F. Morozov» (obschey i prikladnoy fiziki, zaveduyuschiy kafedroy)
from 01.01.2020 until now Voronezh, Voronezh, Russian Federation

Type:

Сonference article

DOI:

https://doi.org/10.58168/PHBSc-IT2025_47-52

Published:

25.08.2025

Subject area:

UDC 539.216.2

Language:

Russian

Keywords:

sputtering, nanoparticles, nanopores, ion track, technique, magnetically sensitive structures, surface modification, thin films, volt-ampere characteristic, Schottky barrier, electrical conductivity

Abstract and keywords

Abstract (English):
The paper considers the advantages and disadvantages of various methods for forming contacts on SiO2/Si systems with ion tracks filled with nanoclusters of ferromagnetic and non-magnetic metals, presents a scheme for measuring the current-voltage characteristic (CVC) of the samples under study, and analyzes magnetoresistance under different external conditions (temperature, external magnetic field) in SiO2-Si systems with nanopores and Cu and Ni nanoparticles. The temperature dependence of positive magnetoresistance is established, which practically disappears at temperatures above 150 K.

Keywords:
sputtering, nanoparticles, nanopores, ion track, technique, magnetically sensitive structures, surface modification, thin films, volt-ampere characteristic, Schottky barrier, electrical conductivity

References

1. Sozdanie sensorov magnitnogo polya na osnove kompozicionnyh nanostruktur s ispol'zovaniem tehnologii ionnyh trekov / A.A. Stolyarov, V.E. Saharov, D.B. Omorokov, N.Yu. Evsikova // Teoriya i tehnika radiosvyazi. – 2024. – № 4. – S. 76-81.

2. Omorokov, D.B. Elektrofizicheskie svoystva metallicheskogo osadka v latentnom treke cistem SiO2 /Si/ metall / D.B. Omorokov, N.Yu. Evsikova // Fizicheskie osnovy sovremennyh tehnologiy : materialy Mezhdunarodnoy nauchno-metodicheskoy konferencii, Voronezh, 25 oktyabrya 2023 goda. – Voronezh: Voronezhskiy gosudarstvennyy lesotehnicheskiy universitet im. G.F. Morozova, 2023. – S. 47-51.

3. Omorokov, D.B. Osobennosti osazhdeniya metalla na podlozhku SiO2/Si s latentnymi trekami / D.B. Omorokov, N.Yu. Evsikova // Doneckie chteniya 2023: obrazovanie, nauka, innovacii, kul'tura i vyzovy sovremennosti : Materialy VIII Mezhdunarodnoy nauchnoy konferencii, Doneck, 25-27 oktyabrya 2023 goda. – Doneck: Doneckiy gosudarstvennyy universitet, 2023. – S. 142-145.

4. Nanostruktury sistem Si/SiO2/metall s trekami bystryh tyazhelyh ionov / S.E. Dem'yanov, E.Yu. Kanyukov, A.V. Petrov, E.K. Belonogov // Izvestiya Rossiyskoy akademii nauk. Seriya fizicheskaya. – 2008. – T. 72, № 9. – S. 1262-1264.

5. Saharov, V.E. Formirovanie nanostruktur na poverhnosti sistemy SiO2/Si s latentnymi trekami dlya preobrazovateley signalov / V.E. Saharov, D.B. Omorokov, N.Yu. Evsikova // Teoriya i tehnika radiosvyazi. – 2023. – № 4. – S. 55-59.

Submit manuscript

To cite

Citations:

Confirmation

Регистрация